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ga-in-as-sb he jin ban dao ti mocvd wai yan gong yi she ji de re li xue fen xi
Author(s): 
Pages: 91-96
Year: Issue:  3
Journal: Transactions of Materials and Heat Treatment

Keyword:  Ⅲ-Ⅴ族半导体化学气相沉积热力学分析;
Abstract: 用亚点阵模型和络合物模型描述ⅢⅤ族半导体MOCVD生长过程中涉及的凝聚相及气相的热力学性质,以系统最小自由焓为相平衡判据;用CALPHAD技术,计算了包括复杂化学反应的多元复相体系的相图和有关相平衡信息;对多元化合物的成分空间及相应的点阵常数、能带间隙和自由焓等性质在该空间的表达提出了规范性模式。结合编建的CHAlGaInPAsSb体系热力学数据库,对ⅢⅤ族合金半导体MOCVD、MBE和LPE工艺的计算机辅助设计具有重要作用。
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