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Effect of BOX and AI on SOI and Glass Anodic Bonding
Author(s): 
Pages: 70-74
Year: Issue:  5
Journal: journal of putian university

Keyword:  SOIanodic bondingburied oxidebonding voltage;
Abstract: 介绍了SOI/Pyrex玻璃静电键合的实验过程和实验现象,利用电流表对静电键合电流进行测量。发现埋氧层厚度越厚,键合电流越小,键合波扩散速度越小。提高键合电压,能有效增大键合电流及加快键合速度。实验也表明玻璃表面溅射铝层对键合产生较大影响。理论分析了产生这些现象的原因,得出埋氧层厚度和键合电压与静电力的关系式。还提出从阳极引一探针电极到SOI器件层,提高玻璃耗尽层与器件层之间电压,实现厚埋氧层SOI片与玻璃键合的方法。
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