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Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures
Pages: 5-8
Year: Issue:  1

Keyword:  电子束反应蒸发单晶ZnO薄膜结构及光学特性;
Abstract: Low temperature epitaxial growth of highly c-axis oriented ZnO thin films was achieved on Si(001)and glass substrates by reactive e-beam evaporation.The influences of growth temperature and structural character of substrates on the microstructural evolution were studied by X-ray diffraction (XRD).Optical transition in the deposited ZnO films was investigated by photoluminescence excitation (PLE)spectrosocpy.The results showed that substrate temperature was critical to obtain high quality ZnO and the optimal growth temperature on glass was about 70 ℃ ,higher than that of the film grown on Si(001).The optical absorption property of ZnO grown on Si(001) is better than that of the film grown on glass.The maintaining of high enough O2 pressure in the reaction chamber during deposition can significantly improve the band-band absorption characteristics of ZnO films,but no improvement in structural quality could be observed from the X-ray diffraction.
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