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Conduction Mechanism of Amorphous Hydrogenated Silicon Nitride Films
Author(s): 
Pages: 26-29
Year: Issue:  1
Journal: VACUUM SCIENCE AND TECHNOLOGY

Keyword:  氮化硅薄膜电导激活能Poole-Frenkel机制;
Abstract: Dependence of conductivity activated energy on nitrogen contents in amorphous hydrogenated silicon nitride (a-SiNx∶H)films was studied.The results show that both Ohmic mechanism and Poole-Frenkel mechanism are responsible for the variations in the conductivity activated energies.Temperature dependence of the current can be analytically evaluated by means of the two mechanisms and the conductivity activated energies can be calculated for samples with different nitrogen contents.Since nitrogen is a donor-type impurity with special stoichiometry in a-SiNx∶H,we propose a modulated doping model to understand the dependence of the conductivity activated energy on N contents.
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