The server is under maintenance between 08:00 to 12:00 (GMT+08:00), and please visit later.
We apologize for any inconvenience caused
Login  | Sign Up  |  Oriprobe Inc. Feed
China/Asia On Demand
Journal Articles
Laws/Policies/Regulations
Companies/Products
Bookmark and Share
Study of Internal Stress in Silicon Nitride Dielectric Thin Films
Author(s): 
Pages: 51-54
Year: Issue:  1
Journal: VACUUM SCIENCE AND TECHNOLOGY

Keyword:  内应力氮化硅薄膜化学气相沉积;
Abstract: The internal stress in silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition was studied.The internal stress was measured by viewing the substrate deflection using an optical interference method.The internal stress of silicon nitride thin films was affected by the process parameters such as gas ratio,deposition temperature and power density.The influence of the process parameters on the internal stress of silicon nitride thin films were studied.We found that the intrinsic stress of silicon nitride films resulted from the free silicon and nitrogen particles implanted during deposition.The thermal stress of silicon nitride films resulted from the unmatched thermal expansion coefficients of substrate and thin film.The internal stress was reduced by selecting the optimum process parameters during deposition.
Related Articles
No related articles found