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Infrared Absorption Properties of Si— O —Si Bonds in Plasma-deposited Amorphous SiOx∶H Films
Author(s): 
Pages: 60-63
Year: Issue:  1
Journal: VACUUM SCIENCE AND TECHNOLOGY

Keyword:  等离子体增强化学气相沉积非晶SiOx∶H薄膜红外吸收光谱Si—O—Si键;
Abstract: Amorphous SiOx∶H(a-SiOx∶H)films were deposited at 300 ℃ by plasma-enhanced chemical vapor deposition using SiH4-O2 mixtures.The properties of infrared absorption for Si— O —Si bonds were studied as a function of the O content x.We found that the ratio,IASl/NSi,of sum of the absorption intensities for both 1000 and 1150 cm-1 bands arising from Si— O —Si stretching mode to the density of Si atoms ,increases linearly with increasing x from 0 to 2.0.The proportionality coefficient ASiO(inverse of the oscillator strength)of the Si— O —Si stretching mode was found to be 1.48×1019 cm-2.
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