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sic qi jian gong yi de fa zhan zhuang kuang
Author(s): 
Pages: 422-425
Year: Issue:  6
Journal: MICROELECTRONICS

Keyword:  碳化硅器件器件工艺半导体材料;
Abstract: 碳化硅(SiC)是一种宽禁带半导体材料,适用于制作高压、高功率和高温器件,并可工作在从直流到微波频率范围.文章阐述了SiC材料的性质,详细介绍了SiC器件工艺(掺杂、刻蚀、氧化及金属半导体接触)的最新进展,并指出了存在的问题及发展趋势.
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