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Growth and Characterization of Transparent Conducting InSnGaMo Oxides Films
Author(s): 
Pages: 109-113
Year: Issue:  2
Journal: Vacuum Science and Technology

Keyword:  InSnGaMo复合氧化物薄膜 透明导电薄膜 脉冲激光沉积 光电性能;
Abstract: 利用脉冲激光沉积法在石英衬底上制备出了可见光透过率高、电阻率极低的Ga,Mo共掺杂ITO基InSnGaMo复合氧化物薄膜。研究了衬底温度对薄膜结构、表面形貌、光电性能的影响。实验结果表明:衬底温度对InSnGaMo复合氧化物薄膜形貌、光电性能均有很大影响。X射线衍射、扫描电镜和霍尔测试结果表明,随着衬底温度的升高,薄膜晶粒度增大,电阻率快速下降,可见光平均透过率明显提高。当衬底温度为450℃时,InSnGaMo复合氧化物薄膜的电阻率最低为4.15×10-4Ω.cm,载流子浓度和迁移率最大分别为3×1020cm-3,45 cm2V-1s-1,在可见及近红外区平均透过率达92%,特别地,波长为362 nm时,最高透射率可达99%。
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