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Formation and Characterization of Ti/n-Type 6H-SiC(0001) Interface
Author(s): 
Pages: 169-171
Year: Issue:  2
Journal: Vacuum Science and Technology

Keyword:  Ti 6H-SiC 界面 肖特基势垒 X射线光电子能谱;
Abstract: 用同步辐射光电子能谱(SRPES)和X射线光电子能谱(XPS)的方法研究了Ti/n型6H-SiC(0001)的接触界面。Ti/n型6H-SiC(0001)样品采用磁控溅射的方法获得,然后将表面的Ti用氩离子刻蚀的方法慢慢刻蚀掉,Ti2p3/2用XPS测得,结合能从刻蚀时间为245 min的457.86 eV逐渐移动到刻蚀时间为255 min时的457.57 eV,移动约为0.3 eV。Si2p用同步辐射光测得,结合能从刻蚀245 min时的101.12 eV移动到干净的100.67 eV,峰形状未发生变化,表明Ti与衬底之间没有发生化学反应,SiC的价带发生弯曲,形成的势垒高度为0.89 eV。向SiC上蒸Si 2.5 min,退火30 min,观察LEED花样,发现当发射电流为30mA,能量37 eV时,SiC表面有√3*√3重构,发射电流为40 mA时,有6√3*6√3的重构。
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