The server is under maintenance between 08:00 to 12:00 (GMT+08:00), and please visit later.
We apologize for any inconvenience caused
Login  | Sign Up  |  Oriprobe Inc. Feed
China/Asia On Demand
Journal Articles
Laws/Policies/Regulations
Companies/Products
Bookmark and Share
The Research on Photoelectrical Properties of Amorphous HgTe Thin Films
Author(s): 
Pages: 190-194
Year: Issue:  4
Journal: Infrared Technology

Abstract: 利用射频磁控溅射方法在宝石衬底上制备了非晶态碲化汞(HgTe)薄膜材料,以He-Ne激光器(hv=1.96eV,λ=632.8nm)作为激励光源,在80~300K温度范围内,研究了非晶态HgTe薄膜的暗电导σd、稳态光电导σp以及光敏性σp/σd的特性,分析了载流子的导电和复合机制.实验发现,在80~300 K温度范围内,非晶态HgTe薄膜的暗电导和稳定态光电导均具有热激活特性.暗电导存在2个温区...
Related Articles
No related articles found