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Photoluminescence of Cu or Mn Doped Amorphous AlN films
Author(s): 
Pages: 508-510
Year: Issue:  6
Journal: CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY

Keyword:  氮化铝中频反应溅射掺杂光致发光;
Abstract: 研究了Mn或Cu掺杂的非晶AlN薄膜在室温下的发光性质.Cu或Mn掺杂的非晶AlN薄膜是在玻璃衬底上采用中频反应磁控溅射制备的.X射线衍射(XRD)结果表明薄膜为非晶.由X射线能谱(EDX)检测分析结果得到薄膜中Cu和Al含量比例为1∶10,Mn和Al含量比例为1∶15.光致发光光谱表明Cu掺杂的AlN薄膜能发出强烈的蓝光(~430 nm)而Mn掺杂则表现为红光(~650 nm).
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