Accurate geometric measurement of nanostructure in chips by high resolution transmission electron microscope
Author(s): LIU Jian-shuang, LI Huo-quan, CHEN Yi
Pages: 50-53
Year: 2010 Issue: 3
Journal: Journal of Yangzhou University(Natural Science Edition)
Keyword: 半导体芯片; 微纳几何结构; 高分辨率透射电子显微镜; 内标法;
Abstract: 提出一种利用高分辨率透射电子显微镜(high resolution transmission electron microscopy,简称HRTEM)对半导体芯片内部微纳几何结构的精确测量方法,分别讨论了测定过程中制样的影响、测量设备放大倍率的校验、样品晶向校对以及不同情况下内标法和标称法的选用.该方法对半导体工业中HRTEM的应用有一定的指导意义.
Pages: 50-53
Year: 2010 Issue: 3
Journal: Journal of Yangzhou University(Natural Science Edition)
Keyword: 半导体芯片; 微纳几何结构; 高分辨率透射电子显微镜; 内标法;
Abstract: 提出一种利用高分辨率透射电子显微镜(high resolution transmission electron microscopy,简称HRTEM)对半导体芯片内部微纳几何结构的精确测量方法,分别讨论了测定过程中制样的影响、测量设备放大倍率的校验、样品晶向校对以及不同情况下内标法和标称法的选用.该方法对半导体工业中HRTEM的应用有一定的指导意义.
Citations
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- 姚立真.可靠性物理[M].北京:电子工业出版社,2004:266-267.
- VAN ZANT P.Microchip fabrication:a practical guide to semiconductor processing[M].5th ed.New York:The McGraw-Hill Companies,Inc,2004:435-437.
- CHAU R,DOYLE B,DATTA S,et al.Integrated nanoelectronics for the future[J].Nat Mater,2007,6(11):810-812.
- MITSUI Y,YANO F,KAKIBAYASHI H,et al.Developments of new concept analytical instruments for failure analyses of sub-100 nm devices[J].Microelectron Reliab,2001,41(8):1171-1183.
- 王蔚晨,何冬琦,莫伟平,等.显微镜的发展及在长度计量中的应用[J].中国计量,2009,14(1):58-61.
- 赫什 P,豪伊 A,尼科尔森 R B,等.薄晶体电子显微学[M].刘安生,李永洪,译.北京:科学出版社,1983:506-510.
- DU A Y,TUNG C H,FREITAG B H,et al.Ultra-thin SiON and high-k HfO2 gate dielectric metrology using transmission electron microscopy[C]//CHUNG S S,TRIGG A,KER M D,et al.IPFA 2004,Proceedings of the 11th International Symposium.Taibei:IEEE Proceeding,2004:135-138.
- AHMED K,IBOK E,BAINS G,et al.Comparative physical and electrical metrology of uhrathin oxides in the 6 to 1.5 nm regime[J].IEEE Trans Electron Devices,2000,47(7):1349-1354.
- 刘剑霜,谢锋,胡刚,等.用电子显微镜剖析存储器器件[J].半导体技术,2004,29(5):68-71.
- SCOTT J H J.Accuracy issues in chemical and dimensional metrology in the SEM and TEM[J].Meas Sci & Tech,2007,18(9):2755-2761.
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