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Effect of Ca2 + Doping on Luminescence Properties of BaMgSiO4: Eu2+ Phosphor
Author(s): 
Pages: 316-320
Year: Issue:  3
Journal: Chinese Journal of Luminescence

Keyword:  Ba1-xCaxMgSiO4:Eu2+发射光谱激发光谱XRD;
Abstract: 采用高温固相法于弱还原气氛中制备了Ba1-xCaxMgSiO4:Eu2+(x≤0.15)发光材料,测量其光谱特性,分析Ca2+掺杂对该发光材料光谱的影响.XRD图谱研究表明:Ca2+在BaMgSiO4基质中极限溶解度x=0.075.发光性能研究表明,当Ca2+掺入量从0增加至0.05时,最强发射峰从498 nm蓝移至450 nm,在掺入量为0.075时,激发和发射强度达到最强,而随着Ca2+掺入量...
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