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Research on SiGeC Power Diodes with Ultra-Low Leakage Current and Ultra-Fast Recovery Characteristics
Author(s): 
Pages: 2525-2529
Year: Issue:  11
Journal: Acta Electronica Sinica

Keyword:  SiGeCultra-low leakage current and ultra-fast recovery characteristicsthermal stability;
Abstract: 提出一种超低漏电流超快恢复SiGeC p-i-n二极管结构.基于异质结电流输运机制,该SiGeC二极管实现了低通态压降下高电流密度的传输,改善了二极管的反向恢复特性,同时具有较低的反向漏电流.与少子寿命控制技术相比,该器件有效协调了降低通态电压、减小反向漏电流、缩短反向恢复时间三者之间的矛盾.对不同温度下器件反向恢复特性研究结果表明,SiGeC二极管的反向恢复时间与同结构SiGe二极管相比,350...
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