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Preparing polycrystalline silion thin film by rapid thermal annealing(RTA) at lower temperature
Pages: 13-15
Year: Issue:  3
Journal: Rural Energy

Keyword:  快速热退火 非晶硅薄膜 暗电导;
Abstract: 利用PECVD设备沉积非晶硅薄膜,然后放入特制的快速热退火炉中进行退火。利用X射线衍射仪(XRD)分析退火后的薄膜晶体结构,用电导率测试仪测试其暗电导率。研究结果表明,利用快速热退火晶化能够使非晶硅薄膜在较低温度下,在较短时间内发生晶化。
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