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Simulation of AlGaAs Narrow Stripe Semiconductor Lasers for Self-pulsating Operation
Author(s): 
Pages: 52-55
Year: Issue:  3
Journal: Journal of Yueyang Normal University

Keyword:  自脉冲 窄条型 半导体激光器 AlGaAs;
Abstract: 采用一维计算模型对窄条型自脉冲激光器的结构进行了全面的模拟设计.数值计算模型基于有效折射率法和窄条型结构的自维持脉冲机理,在有源层载流子浓度调节下光场产生的自聚焦和散焦现象增强了自脉冲效应.多量子阱AlGaAs器件的设计输出自脉冲频率达到1.45GHz,完全符合实际器件参数.
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