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Surface Segregation and Content Variation in Si_(1-x)Ge_x Growth on Si in Ultra High Vacuum by Chemical Vapor Deposition
Author(s): 
Pages: 58-62
Year: Issue:  2
Journal: Vacuum Science and Technology

Keyword:  硅锗外延层 表面偏析 超高真空 化学气相沉积;
Abstract: 系统分析了利用超高真空CVD技术在Si衬底上外延Si1-xGex 合金的体内组分分布情况和Ge的表面偏析现象。用SIMS对Si和Ge的组分作了深度剖析。在生长过程中 ,组分均匀 ,在表面Ge浓度减小 ,Si浓度没有明显变化。在不经HF酸清洗和在HF酸中去掉表面自然氧化层的两种情况下 ,用XPS分别对外延层表面进行了定量分析 ,得到Ge的表面偏析与表面自然氧化相关的结论
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