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Effects of Substrate Temperature and Hydrogen Annealing on Properties of ZnO:Al Films
Author(s): 
Pages: 72-75
Year: Issue:  1
Journal: Vacuum Science and Technology

Keyword:  ZnO:Al薄膜 氢气退火 电阻率 光透过率 Burstein-Moss效应;
Abstract: 采用射频磁控溅射法在石英玻璃衬底上制备了性能良好的透明导电ZnO:Al薄膜,并研究了衬底温度和氢气退火对薄膜结构和光电性能的影响。结果表明,衬底加热可以改善薄膜结晶质量和c轴择优取向,减小内应力,并提高其电学性能。经稀释氢气退火后,500℃沉积的薄膜电阻率由9.4×10-4Ω.cm减小到5.1×10-4Ω.cm,迁移率由16.4cm2.V-1.s-1增大到23.3 cm2.V-1.s-1,载流子浓度由4.1×1020cm-3提高到5.2×1020cm-3,薄膜的可见光区平均透射率仍达85%以上。禁带宽度随着衬底温度的升高和氢气退火而展宽。
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