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Influence of AlN Buffer Layer on GaN Film Growth on Si(111) Substrates
Author(s): 
Pages: 308-312
Year: Issue:  4
Journal: Vacuum Science and Technology

Keyword:  Si基GaN AlN 综述 应力 位错;
Abstract: AlN作为中间层可以有效提高硅基GaN的晶体质量。本文对于AlN作为形核层和插入层提高GaN晶体质量的机理进行分析和总结,并给出AlN的最佳生长条件。
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