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Gas Supply System for Growth of High Quality InGaN/GaN Multi-Quantum-Wells by Metal Organic Chemical Vapor Deposition
Author(s): 
Pages: 313-316
Year: Issue:  4
Journal: Vacuum Science and Technology

Keyword:  金属有机化学气相淀积 多量子阱 配气系统;
Abstract: 本文提出了一种新型的MOCVD恒流配气系统,该配气系统可有效地稳定控制温度和压力等关键工艺条件,在多层复杂结构的生长中改善材料质量。本文给出了该配气系统同传统配气方式生长效果的比较,PL对比测试结果表明,该配气系统在多量子阱结构的制备中具有良好的效果。
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