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Development of Ultra-high Vacuum System for SiGe Films Growth by Chemical Vapor Deposition
Author(s): LUO Guangli, CHEN Peiyi, LIN Huiwang, LIU Zhinong, QIAN Peixin(instituteofmicroelectronis, TSINGHUA University, beijing, 100084)
Pages: 53-
55
Year: 2000
Issue:
5
Journal: Vacuum Science and Technology
Keyword: 超高真空化学气相沉积; SiGe; 低温外延;
Abstract: 研制成功了一台超高真空化学气相沉积系统。该系统采用扁平石英管作为生长室 ,扁平石墨加热器进行加热。系统真空度用分子泵维持 ,本底真空度可达 2× 10 -6Pa。利用该系统所生长的SiGe外延层晶体质量良好 ,界面清晰平直 ;利用Ge组分渐变技术还能够实现低位错密度弛豫SiGe外延层的生长
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