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Development of Ultra-high Vacuum System for SiGe Films Growth by Chemical Vapor Deposition
Author(s): 
Pages: 53-55
Year: Issue:  5
Journal: Vacuum Science and Technology

Keyword:  超高真空化学气相沉积 SiGe 低温外延;
Abstract: 研制成功了一台超高真空化学气相沉积系统。该系统采用扁平石英管作为生长室 ,扁平石墨加热器进行加热。系统真空度用分子泵维持 ,本底真空度可达 2× 10 -6Pa。利用该系统所生长的SiGe外延层晶体质量良好 ,界面清晰平直 ;利用Ge组分渐变技术还能够实现低位错密度弛豫SiGe外延层的生长
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