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Influence of Sputtering Atmosphere on Growth and Characteristics of(Pb_(1-x)Sr_x)TiO_3 Films
Author(s): 
Pages: 417-420
Year: Issue:  5
Journal: Vacuum Science and Technology

Keyword:  (Pb1-xSrx)TiO3铁电薄膜 磁控溅射 Ar与O2分压比;
Abstract: 采用高频磁控溅射法制备了Si基(Pb1-xSrx)TiO3系铁电薄膜(以下简称PST/Si)。实验表明,合适的Ar、O2分压比,能保证溅射时挥发出的Pb及时与补充的O离子得以充分化合,确保制备所需成份的PST薄膜。O2分压过高,Au电极中将有大量的O离子严重渗透,从而使PST薄膜介电损耗增加并降低其极化能力。实验中Ar、O2比为5∶1的PST/Si样品性能较好,其介电损耗约在0.12~0.21之间,热释电系数约为2.35×10-2μC/cm2K。
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