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Development of Vertical High-Vacuum MOCVD and Its Applications in GaN Epitaxial Growth and GaN-Based Device Fabrication
Author(s): 
Pages: 48-50
Year: Issue:  6
Journal: Vacuum Science and Technology

Keyword:  MOCVD GaN 外延生长 多量子阱 发光二极管;
Abstract: 自行设计了一套具有创新性的研究型立式高真空MOCVD装置 ,能够较好的调节反应气体的流动状态 ,从而在衬底上生长大面积均匀的外延层。利用该装置在蓝宝石和硅单晶衬底上成功地生长出高质量的GaN晶体薄膜。在蓝宝石衬底上生长出n、p型GaN以及多量子阱多层结构材料 ,并成功制备了GaN基多层量子阱结构的蓝光发光二极管 ,性能良好 ,具有实用价值。
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