The ZnTe Nano-Thin Film Prepared By Vacuum Evaporation
Author(s): LI Zhong-xian, LI Rong-ping, WU Rong
Pages: 22-25
Year: 2009 Issue: 4
Journal: Information Recording Materials
Keyword: ZnTe; vacuum evaporation; crystal structure; Optical band gap; nano thin film;
Abstract: ZnTe nano thin films are prepared by vacuum evaporation on glass substrate. The absorbency characteristic , the crystal structure , Type of conduction , Electric resistance, Refrac-tive index and thickness of thin films were studied by X-ray diffraction instrument, ultraviolet-vis-ible spectrophotometer,thin film measure. The result shows that the ZnTe thin films was best when Zn:Te=1:0.7, annealing temperature T= 500℃. Thin films preferred orientation of crystal plane (111) was observed, optical transmission increased, The optical band gap of thin films is 2.341eV. Type of conduction is P Type. Refractive index of thin film is decreased with wavelength increased evidently.
Pages: 22-25
Year: 2009 Issue: 4
Journal: Information Recording Materials
Keyword: ZnTe; vacuum evaporation; crystal structure; Optical band gap; nano thin film;
Abstract: ZnTe nano thin films are prepared by vacuum evaporation on glass substrate. The absorbency characteristic , the crystal structure , Type of conduction , Electric resistance, Refrac-tive index and thickness of thin films were studied by X-ray diffraction instrument, ultraviolet-vis-ible spectrophotometer,thin film measure. The result shows that the ZnTe thin films was best when Zn:Te=1:0.7, annealing temperature T= 500℃. Thin films preferred orientation of crystal plane (111) was observed, optical transmission increased, The optical band gap of thin films is 2.341eV. Type of conduction is P Type. Refractive index of thin film is decreased with wavelength increased evidently.
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