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Effect of LaNiO2 Buffer Layer on the Structure and Electrical Properties of Pb ( Mg1/3Nb2/3 ) O3-PbTiO3 Thin Films Deposited by Chemical Solution Method
Author(s): 
Pages: 422-426
Year: Issue:  2
Journal: JOURNAL OF SYNTHETIC CRYSTALS

Keyword:  LNO缓冲层PMNT薄膜烧绿石相;
Abstract: 采用化学溶液法在Pt/TiO2/SiO2/Si衬底上制备了92%Pb(Mg1/3/Nb2/3)O3-8%PbTiO3(PMNT)薄膜,对于在衬底上引入缓冲层LaNiO3(LNO)和没有引入缓冲层LNO所制备的PMNT薄膜结构及电学性能进行了比较和研究.x射线衍射测试结果表明:直接在Pt/TiO2/SiO2/Si衬底上所制备的PMNT薄膜含有大量的烧绿石相,且薄膜呈现高度的(111)择优取向;而当在Pt/TiO2/SiO2/Si衬底上引入LNO缓冲层后,所制备的PMNT薄膜是纯钙钛矿相,且薄膜呈现(100)择优取向.通过铁电和介电性能测试表明:当在Pt/TiO2/SiO2/Si衬底上引入缓冲层LNO后,所制备的PMNT薄膜的剩余极化和介电常数也都得到了较大提高.
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