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First-principles Study of Clean and Defects Induced InN(0001) Surface
Author(s): 
Pages: 50-53
Year: Issue:  2
Journal: JOURNAL OF HENAN NORMAL UNIVERSITY(NATURAL SCIENCE)

Keyword:  吸附第一性原理InN形成能;
Abstract: 利用第一原理研究了纤锌矿结构InN(0001)表面结构.用两种势(US-PP和PAW)对氮化铟晶格常数优化,用US-PP势计算值和实验值符合的更好.US-PP势总能计算表明氮吸附在InN(0001)面的(2×2)结构H3位最稳定,铟吸附在InN(0001)面的(1×2)结构T4位最稳定.InN(0001)表面容易形成铟层,氮空位很可能是造成n型InN的高载流子浓度的施主.
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