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Issue:
First-principles Study of Clean and Defects Induced InN(0001) Surface
Author(s):
DAI Xian-qi
,
WANG Jian-li
,
YAN Hui-juan
Pages:
50
-
53
Year:
2008
Issue:
2
Journal:
JOURNAL OF HENAN NORMAL UNIVERSITY(NATURAL SCIENCE)
Keyword:
吸附
;
第一性原理
;
InN
;
形成能
;
Abstract:
利用第一原理研究了纤锌矿结构InN(0001)表面结构.用两种势(US-PP和PAW)对氮化铟晶格常数优化,用US-PP势计算值和实验值符合的更好.US-PP势总能计算表明氮吸附在InN(0001)面的(2×2)结构H3位最稳定,铟吸附在InN(0001)面的(1×2)结构T4位最稳定.InN(0001)表面容易形成铟层,氮空位很可能是造成n型InN的高载流子浓度的施主.
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