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Integrated design and test of low noise amplifier
Author(s): 
Pages: 172-174
Year: Issue:  12
Journal: ELECTRONIC MEASUREMENT TECHNOLOGY

Keyword:  赝品高电子迁移率晶体管低噪声放大器微波单片集成电路宽带;
Abstract: 根据低噪声放大器的设计原理、结合南京电子器件研究所提供的器件模型,设计了S波段单片低噪声放大器,并在该所的砷化镓(GaAs)工艺线上流片生产,最后进行了测试.在2.2~2.8 GHz,增益大于21 dB,噪声系数小于1.95 dB,输入、输出驻波比小于1.45,在2.5 GHz处1 dB压缩输出功率大于11 dBm.测试结果表明,该电路易于集成、性能可靠,但驻波比还有待改善.
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