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Analysis of the Structure of Laser Crystallized amorphous Silicon Thin Film
Author(s): 
Pages: 18-20,24
Year: Issue:  1
Journal: APPLIED LASER

Keyword:  非晶硅薄膜激光晶化纳米微晶硅结构;
Abstract: 以射频(频率为13.6MHz)磁控溅射系统制备的非晶硅薄膜为前驱物,采用激光晶化技术实现从非晶硅薄膜到纳米晶硅薄膜的相变过程.采用拉曼光谱仪和高分辨透射电镜对激光晶化薄膜的组织结构进行了研究.结果表明:薄膜由非晶硅结构转变为微晶硅结构,微晶硅晶粒尺寸在纳米级.激光晶化存在一个最佳工艺参数,功率太高或太低都不利于晶化.
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