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Photoluminescence of ZnO Films Naturally Doped and Codoped with N and Al
Author(s): FU Guang-sheng, SUN Wei, L(U) Xue-qin, WANG Chun-sheng, YIN Zhi-hui, YU Wei
Pages: 549-
551
Year: 2006
Issue:
4
Journal: CHINESE JOURNAL OF LASERS
Keyword: 薄膜; p型ZnO发光特征; 光致发光; 掺杂技术貂;
Abstract: 采用螺旋波等离子体辅助溅射技术制备了自然掺杂及N-Al共掺杂ZnO薄膜,对两种不同类型掺杂薄膜的低温光致发光(PL)特性进行了研究.实验结果表明,二者均呈现出了较强的与受主能级相关的发光特征,自然掺杂薄膜的光致发光谱在404.0 nm处出现了由于锌空位产生的近带边发光,N-Al共掺杂薄膜的光致发光谱在383.0 nm处出现了N作为受主的施主-受主对(DAP)跃迁发光.两种薄膜的发光特性比较分析表明,N-Al共掺杂技术能够有效提高N的固溶度,N受主能级密度增加使薄膜表现出较强的施主-受主对跃迁发光,表明该技术为实现p型ZnO薄膜制备的有效方法.
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