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The Application of Ⅰ-Ⅴ Three-Halves Power Relationship to an Ideal Planar Parallel Vacuum Microelectronics Diode
Author(s): 
Pages: 33-36
Year: Issue:  1
Journal: VACUUM ELECTRONICS

Keyword:  平面平行真空微电子二极管二分之三次方关系式空间电荷;
Abstract: 在一定的假定条件下,考虑空间电荷影响,平面平行真空微电子(P-VMD)二极管中电流-电压近似按二分之三次方关系式工作.本文在此关系式及Forler-Nordheim场发射方程的基础上[2],通过解简化立方方程,进一步推导出管内的电位、电场强度、电子速度和空间电荷密度的分布函数.P-VMD二极管在保持管内结构与阴极表面电场强度不变,并工作在典型工作状态(归一化电位系数p=2/3)情况下,考虑空间电荷影响时的阳极电压、阳极电场强度和阳极电子速度分别比无空间电荷影响时增加约50.00%,73.21%和22.47%.P-VMD二极管内的空间电荷密度分布函数为正割函数,在阳极表面附近为最小,在阴极表面处为无穷大,这是由于本文假设在阴极表面处的电子初速度为零的缘故.
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